Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures
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منابع مشابه
Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures
It is known that the Zn doping profile in strained multi-quantumwell (MQW) InGaAsP lasers strongly affects the electro-optical characteristics of these devices and their temperature sensitivity. A systematic investigation of the excitation dependence of the active layer photoluminescence (PL) intensity from compressively strained InGaAsP MQW pin laser material with different Zn doping profiles ...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 2005
ISSN: 0013-5194
DOI: 10.1049/el:20052347